ts m 900 n 10 tai wan semiconductor document number: ds_p0000173 1 version: a 15 n - channel power mosfet 1 0 0v, 15 a, 90m features 100% avalanche tested l ow gate charge for f ast switching pb - free plating rohs compliant halogen - free mold compound a pplication networking load switch ing led lighting control ac - dc secondary rectification key performance parameters p arameter value unit v ds 100 v r d s(on) (max) v gs = 10v 90 m v gs = 4 .5v 100 q g 9.3 nc to - 251 s (ipak sl ) to - 252 (dpak) notes: moisture sensitivity level: level 3. p er j - std - 020 absolute m aximum ratings ( t a = 25 c unless otherwise noted ) p arameter s ymbol l imit u nit drain - source voltage v ds 1 00 v gate - source voltage v gs 2 0 v continuous drain current (note 1 ) t c = 25 c i d 15 a t c = 100 c 9.5 pulsed drain current (note 2 ) i dm 60 a total power dissipation @ t c = 25 c p dtot 50 w single pulsed avalanche ener gy (note 3 ) e as 18 mj single pulsed avalanche current (note 3 ) i as 6 a operating junction and storage temperature range t j , t stg - 55 to +1 50 c thermal performance p arameter s ymbol limit unit junction to case thermal resistance r ? jc 2.5 c /w junction to ambient thermal resistance r ? ja 62 c /w notes: r ? ja is the sum of the junction - to - case and case - to - ambient thermal resistances. the case thermal reference is defined at the solder mounting surface of the drain pins. r ? ja is guara nteed by design while r ? ca is determined by the users board design. r ? ja shown below for single device operation on fr - 4 pcb in still air .
ts m 900 n 10 tai wan semiconductor document number: ds_p0000173 2 version: a 15 electrical specifications ( t a = 25 c unless otherwise noted ) parameter conditions symbol m in t yp m ax u nit static ( note 4 ) drain - source breakdown voltage v gs = 0 v, i d = 250 a bv dss 1 00 -- -- v gate threshold voltage v ds = v gs , i d = 250a v gs(th) 1.2 1.6 2.5 v gate body leakage v gs = 2 0 v, v ds = 0v i gss -- -- 100 na zero gate voltage drain current v ds = 1 0 0v, v gs = 0v i dss -- -- 1 a drain - source on - state resistance v gs = 10v, i d = 5 a r ds(on ) -- 72 90 m gs = 4.5 v, i d = 3 a 75 100 dynamic (note 5 ) total gate charge v ds = 48 v, i d = 5 a, v gs = 10 v q g -- 9.3 -- nc gate - source charge q gs -- 2.1 -- gate - drain charge q gd -- 1.8 -- input capacitance v ds = 5 0 v, v gs = 0v, f = 1.0mhz c iss -- 1480 - - pf output capacitance c oss -- 480 -- reverse transfer capacitance c r ss -- 35 -- g ate resistance f = 1mhz , open drain r g -- 1.3 -- switching (note 6 ) turn - on delay time v dd = 30v, r gen = 3.3 d = 1 a, v gs = 10v, t d(on) -- 2.9 -- ns turn - on rise time t r -- 9.5 -- turn - off delay time t d(off) -- 18.4 -- turn - off fall time t f -- 5.3 -- source - drain diode (note 4 ) forward on voltag e i s = 3.3 a, v gs = 0v v sd - - - - 1 v continuous drain - source diode v g =v d =0v , force current i s -- -- 1 5 a pulse drain - source diode i s m -- -- 60 a notes: 1. current limited by package 2. pulse width limited by the m aximum junction temperature 3. l = 0.1 mh, i as = 6 a, v dd = 50 v, r g = 25, start ing t j = 25 o c 4. p ulse test: pw 300s , d u ty cycle 2% 5. for design aid only, not subject to production testing. 6. switching time is essentially independent of operating temperature.
ts m 900 n 10 tai wan semiconductor document number: ds_p0000173 3 version: a 15 ordering information (example) part no. package packing tsm 900n10 c h x0 g to - 251 s (ipak sl ) 75 pcs / tube tsm 900n10 c p rog to - 252 (dpak) 2,500pcs / 13 reel note: 1. compliant to rohs directive 2011/65/eu and in accordance to weee 2002/96/ec 2. halogen - free according to iec 61249 - 2 - 21 definition
ts m 900 n 10 tai wan semiconductor document number: ds_p0000173 4 version: a 15 characteristics curves ( t c = 25c unless otherwise noted) continuous drain current vs. t c gate charge on - resistance vs. junction temperature threshold voltage vs. junction temperature maximum safe operating are a normalized thermal transient impedance curve v gs , gate to source voltage (v) qg, gate charge ( nc ) i d , continuous drain current (a) t c , case temperature ( c ) normalized gate threshold voltage (v) t j , junction temperature ( c ) normalized on resistance (m ? j , junction temperature ( c ) i d , continuous drain current (a) v ds , drain to source voltage (v) normalized thermal response (r jc
ts m 900 n 10 tai wan semiconductor document number: ds_p0000173 5 version: a 15 package outline dimensions (unit: millimeters) t o - 251 s (ipak sl ) marking diagram y = year code m = month code for halogen free product o =jan p =feb q =mar r =apr ` s =may t =jun u =jul v =aug w =sep x =oct y =nov z =dec l = lot code (1~9, a~z)
ts m 900 n 10 tai wan semiconductor document number: ds_p0000173 6 version: a 15 package outline dimensions (unit: millimeters) t o - 252 (dpak) suggested pad layout marking diagram y = year code m = month code for halogen free product o =jan p =feb q =mar r =apr ` s =may t =jun u =jul v =aug w =sep x =oct y =nov z =dec l = lot code (1~9, a~z)
ts m 900 n 10 tai wan semiconductor document number: ds_p0000173 7 version: a 15 notice specifications of the products d isplayed herein are subject to change without notice. tsc or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express o r implied, to any intellectual property rights is granted by this document. except as provided in tscs terms and conditions of sale for such products, tsc assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and /or use of tsc products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. the products shown herein are not designed for use in medical, life - saving, or life - sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify tsc for any damages resulting from such improper use or sale.
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